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HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 90N30 IXFK 90N30
VDSS ID25
RDS(on)
= 300 V = 90 A = 33 m
trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC TC TC TC = 25C (MOSFET chip capability) = 104C (External lead capability) = 25C, pulse width limited by TJM = 25C
Maximum Ratings 300 300 20 30 90 75 360 90 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C Nm/lb.in. 6 10 g g
PLUS 247TM
G
(TAB) D
TO-264 AA (IXFK)
G
TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C
D
(TAB)
S
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 0.4/6
300
Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2.0 V 4.0 V 100 nA TJ = 25C TJ = 125C 100 A 2 mA 33 m
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls
Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density
l
(c) 2001 IXYS All rights reserved
98537A (12/01)
IXFK 90N30 IXFX 90N30
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 40 70 10000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 700 42 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External), 55 100 40 360 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 60 180 0.22 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
A A1 A2 b b1 b2 C D E e L L1 Q R Dim.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 90 360 1.5 250 A A V ns C A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
IF = 50A,-di/dt = 100 A/s, VR = 100 V
1.4 10
Dim.
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 5,187,117 5,237,481
Min.
Inches Max.
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 5,486,715 5,381,025 6,306,728B1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
IXFK 90N30 IXFX 90N30
200
TJ = 25OC
150
VGS = 9V 8V TJ = 125OC 7V
160
125
VGS = 9V 8V
7V
6V
ID - Amperes
ID - Amperes
6V
100 75 50 25
4V
120 80
5V
5V
40
4V
0
0 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12
VDS - Volts
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25C
3.2
VGS = 10V
Fig.2 Output Characteristics @ Tj = 125C
3.0
VGS = 10V
2.8
RDS(ON) - Normalized
2.4 2.0 1.6
TJ = 25oC
RDS(ON) - Normalized
TJ = 125 C
O
2.6 2.2
ID = 90A
1.8
ID = 45A
1.2 0.8 0 40 80 120 160 200
1.4 1.0 25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Fig.3 RDS(on) vs. Drain Current
100 80
Fig.4 Temperature Dependence of Drain to Source Resistance
160 140
ID - Amperes
ID - Amperes
TJ = 150oC
120 100 80 60 40 20
TJ = 25oC TJ = 125oC
60 40 20 0
-50
-25
0
25
50
75
100 125 150
0 3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
TC - Degrees C
VGS - Volts
Fig.5 Drain Current vs. Case Temperature
Fig.6 Drain Current vs Gate Source Voltage
(c) 2001 IXYS All rights reserved
IXFK 90N30 IXFX 90N30
10 8
VDS = 150 V ID = 45 A IG = 10 mA
20
f = 100kHz
10
Ciss
Capacitance - nF
VGS - Volts
6 4 2 0 0 50 100 150 200 250 300
5
Coss
1
Crss
0.5
0 5 10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Fig.7 Gate Charge Characteristic Curve
200
Fig.8 Capacitance Curves
160
ID - Amperes
120
80
TJ = 125OC TJ = 25OC
40
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.9 Drain Current vs Drain to Source Voltage
1.000
R(th)JC - K/W
0.100
0.010
0.001 10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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